Seebeck/Peltier thermoelectric conversion device employing a stack of alternated nanometric layers of conductive and dielectric material and fabrication process

摘要

A multilayered stack useful for constituting a Seebeck-Peltier effect electrically conductive septum with opposite hot-side and cold-side metallizations for connection to an electrical circuit, comprises a stacked succession of layers (Ci) of electrically conductive material alternated to dielectric oxide layers (Di) in form of a continuous film or of densely dispersed nano and sub-nano particles or clusters of particles of oxide; at least the electrically conductive layers having mean thickness ranging from 5 to 100 nm and surface irregularities at the interfaces with the dielectric oxide layers of mean peak-to-valley amplitude and mean periodicity comprised between 5 to 20 nm.;Various processes adapted to build a multilayered stack of these characteristics are described.