FABRICATION METHOD OF TANDEM-TYPE CIGS THIN FILMS AND ITS APPLICATION TO CIGS THIN FILM SOLAR CELLS

摘要

The present invention relates to a manufacturing method of a tandem-type CIGS thin film and a CIGS thin film solar cell manufactured thereby. The tandem-type CIGS thin film of the present invention performs a single sputtering process on the top of a substrate in which an electrode layer is evaporated using each single target of CIS and CGS, laminates a low cell of a CIS absorption layer and an upper cell of a CGS absorption layer in order, forms it as a tandem-type, and manufactures a solar cell using the same. The present invention forms a CIGS light absorption layer of a tandem-type with a single sputtering evaporation process without a selenization process of the CIS and CGS layers having the different absorption coefficient. Therefore, the present invention has an excellent effect in terms of the economic feasibility and effectiveness of the process and provides an effect capable of obtaining a solar cell in which efficiency can be optimized by manufacturing an excellent thin film crystallographically.