首页> 外国专利> METHOD FOR MANUFACTURING SPUTTERING TARGET USING COLD SPRAY AND COLD SPRAY DEVICE

METHOD FOR MANUFACTURING SPUTTERING TARGET USING COLD SPRAY AND COLD SPRAY DEVICE

机译:利用冷喷涂和冷喷涂装置制造溅射靶的方法

摘要

Disclosed are a method for manufacturing a sputtering target using a cold spray which can uniformly add an Na component into a Cu-Ga layer and a cold spray device for performing the same. The method for manufacturing the sputtering target using the cold spray according to the present invention comprises the steps of: arranging a backing plate formed of a metal or a basic material in front of the cold spray device; supplying the mixed powders consisting of Cu-Ga powder alloyed with Cu and Ga in a weight ratio of 7:3 to 8:2 wt% and 0.01 to 0.05 wt% of Na_2S powder based on the Cu-Ga powder, to a mixing chamber in the cold spray device; and supplying a working gas to the mixing chamber and applying the mixed powders sprayed at high speed together with the working gas, to the surface of the backing plate or the basic material. In addition, the cold spray device of the present invention includes a spray nozzle for moving the mixture containing the high-temperature working gas flowing in from the outside and the solid powder at a supersonic speed through the cavity formed at the inside thereof, so as to spray the mixture to the surface of the basic material, and further includes a cooling member which is formed to cover the outside of the spray nozzle, and cools the spray nozzle through a refrigerant so as not to fuse or fix the solid powder at the inner cavity of the spray nozzle.
机译:公开了一种使用冷喷涂制造溅射靶的方法,该方法可以将Na组分均匀地添加到Cu-Ga层中,并且使用该冷喷涂设备进行溅射。根据本发明的使用冷喷涂的溅射靶的制造方法包括以下步骤:在冷喷涂装置的前面布置由金属或基础材料形成的背板;将基于Cu-Ga粉末的重量比为7:3至8:2 wt%和0.01至0.05 wt%的Na_2S粉末的由混合有Cu和Ga的Cu-Ga粉末组成的混合粉末供给到混合室在冷喷装置中;向混合室供应工作气体,并将与高速喷射的混合粉末与工作气体一起施加到背板或基础材料的表面。另外,本发明的冷喷涂装置包括喷嘴,该喷嘴使包含从外部流入的高温工作气体和固体粉末的混合物以超音速通过其内部形成的空腔,以超音速移动。用于将混合物喷射到基础材料的表面上,并且还包括冷却构件,该冷却构件形成为覆盖喷嘴的外部,并且通过制冷剂冷却喷嘴,从而不会将固体粉末熔合或固定在喷嘴上。喷嘴的内腔。

著录项

  • 公开/公告号KR20140105763A

    专利类型

  • 公开/公告日2014-09-02

    原文格式PDF

  • 申请/专利权人 TAEKWANG TECH;

    申请/专利号KR20147016606

  • 发明设计人 KIM JU HO;PARK DONG YONG;

    申请日2012-12-21

  • 分类号H01L31/18;H01L31/042;H01L21/203;C23C14/34;C22C9;

  • 国家 KR

  • 入库时间 2022-08-21 15:42:13

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