首页> 外国专利> Hydrometallurgical process for the recovery of lll-V, ll-Vl or l-lll-Vl2 compound semiconductor materials from high-tech or green-tech waste or electrical and electronic waste

Hydrometallurgical process for the recovery of lll-V, ll-Vl or l-lll-Vl2 compound semiconductor materials from high-tech or green-tech waste or electrical and electronic waste

机译:从高科技或绿色高科技废物或电气和电子废物中回收III-V,III-V1或III-III-V12化合物半导体材料的湿法冶金工艺

摘要

The present invention relates to a wet chemical process for the recovery of metals, which are often only found in low concentration, among other things, as typical III-V, II-VI or I-III-VI2 compound semiconductor materials in high-tech or green-tech Waste, or electrical and electronic waste, occur as rear contacts, such as molybdenum or front contacts, such as TCO's, but also in all non-silicon-based thin-film photovoltaic waste. For this purpose, the mechanically pretreated waste is covered with water and then contacted with sodium bisulfate and sodium chlorite or with methylsulfonic acid and an oxidizing agent, whereby the typical III-V, II-VI or I-III-VI2 compound semiconductor materials go into solution. This is followed by the separation of the solid from the liquid phase and further treatment.
机译:本发明涉及一种用于回收金属的湿化学方法,该金属通常仅以低浓度发现,尤其是作为高科技中典型的III-V,II-VI或I-III-VI2化合物半导体材料。或绿色技术废物或电气和电子废物会以后接触(如钼)或前接触(如TCO)的形式发生,但也会出现在所有非硅基薄膜光伏废物中。为此,将经过机械预处理的废物用水覆盖,然后使其与硫酸氢钠和亚氯酸钠或与甲基磺酸和氧化剂接触,从而可以得到典型的III-V,II-VI或I-III-VI2化合物半导体材料。解决。随后是将固体与液相分离并进行进一步处理。

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