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Wafer support with devices for improving the heating speed equal to moderately in systems for the chemical vapor deposition
Wafer support with devices for improving the heating speed equal to moderately in systems for the chemical vapor deposition
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机译:晶圆支撑装置的加热速度与化学气相沉积系统中的加热速度适中
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摘要
The wafer carrier assembly for use in a system for the growth of an epitaxial layers on one or more wafers by chemical vapor deposition (cvd), wherein the the wafer carrier assembly comprising:a wafer carrier body, of the symmetrically about a central axis is formed and includes a generally planar upper side, which is perpendicular to the central axis is arranged;at least one wafer holding pocket, which in the wafer carrier body is recessed from the top side, each wafer holding pocket a bottom surface and a surrounding wall surface which surrounds the bottom surface and a circumference of said wafer holding pocket is defined, wherein the wafer holding pocket is configured to provide a wafer to keep within the circumference, if it is rotated around the central axis; andthe wafer holding pocket of the further is configured for a wafer with at least one flat edge, whereby a portion of the bottom surface, via which the at least one flat edge of the wafer is held, has a raised portion, the less is cut out of the form of portions of the bottom surface, which is below a rounded edge portions of the wafer are.
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