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Wafer support with devices for improving the heating speed equal to moderately in systems for the chemical vapor deposition

机译:晶圆支撑装置的加热速度与化学气相沉积系统中的加热速度适中

摘要

The wafer carrier assembly for use in a system for the growth of an epitaxial layers on one or more wafers by chemical vapor deposition (cvd), wherein the the wafer carrier assembly comprising:a wafer carrier body, of the symmetrically about a central axis is formed and includes a generally planar upper side, which is perpendicular to the central axis is arranged;at least one wafer holding pocket, which in the wafer carrier body is recessed from the top side, each wafer holding pocket a bottom surface and a surrounding wall surface which surrounds the bottom surface and a circumference of said wafer holding pocket is defined, wherein the wafer holding pocket is configured to provide a wafer to keep within the circumference, if it is rotated around the central axis; andthe wafer holding pocket of the further is configured for a wafer with at least one flat edge, whereby a portion of the bottom surface, via which the at least one flat edge of the wafer is held, has a raised portion, the less is cut out of the form of portions of the bottom surface, which is below a rounded edge portions of the wafer are.
机译:用于通过化学气相沉积(cvd)在一个或多个晶片上生长外延层的系统中使用的晶片载体组件,其中该晶片载体组件包括:围绕中心轴对称的晶片载体。形成并包括垂直于中心轴线的大体上平坦的上侧;至少一个晶片容纳袋,该晶片容纳袋在晶片载体中从顶侧凹入,每个晶片容纳袋具有底表面和围壁。限定围绕所述底表面的表面和所述晶片容纳袋的圆周,其中,如果所述晶片容纳袋绕中心轴旋转,则所述晶片容纳袋被构造成提供晶片以保持在所述圆周内;进一步的晶片保持袋被构造成用于具有至少一个平坦边缘的晶片,由此用于保持晶片的至少一个平坦边缘的底表面的一部分具有凸起部分,被切割的部分更少底部表面的一部分的形状不位于晶片的圆形边缘的下方。

著录项

  • 公开/公告号DE202014002365U1

    专利类型

  • 公开/公告日2014-08-07

    原文格式PDF

  • 申请/专利权人 VEECO INSTRUMENTS INC.;

    申请/专利号DE202014002365U1

  • 发明设计人

    申请日2014-03-17

  • 分类号C30B25/12;C23C16/458;H01L21/67;

  • 国家 DE

  • 入库时间 2022-08-21 15:36:54

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