首页> 外国专利> THIN FILM TRANSISTOR ELEMENT SUBSTRATE, METHOD OF PRODUCING THE SUBSTRATE, AND ORGANIC EL DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR ELEMENT SUBSTRATE

THIN FILM TRANSISTOR ELEMENT SUBSTRATE, METHOD OF PRODUCING THE SUBSTRATE, AND ORGANIC EL DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR ELEMENT SUBSTRATE

机译:薄膜晶体管元件基板,该基板的制造方法以及包括该薄膜晶体管元件基板的有机EL显示装置

摘要

The thin film transistor element substrate of the present disclosure includes a first moisture barrier layer covering the gate insulating layer and the gate electrode, covering the contact regions of the oxide semiconductor layer other than the connecting portion of the contact region connected to the source electrode and the connecting portion of the contact region connected to the drain electrode, and covering an surface of the substrate on which the oxide semiconductor layer is not disposed. The first moisture barrier layer includes a metal oxide and is formed by atomic layer deposition. The first moisture barrier layer formed by atomic layer deposition is in contact with a pair of contact regions.
机译:本公开的薄膜晶体管元件基板包括第一防潮层,其覆盖栅极绝缘层和栅电极,覆盖除连接至源电极的接触区域的连接部分以外的氧化物半导体层的接触区域,以及接触区域的连接部分连接到漏电极,并覆盖衬底的未设置氧化物半导体层的表面。第一防潮层包括金属氧化物并且通过原子层沉积形成。通过原子层沉积形成的第一防潮层与一对接触区域接触。

著录项

  • 公开/公告号US2015263312A1

    专利类型

  • 公开/公告日2015-09-17

    原文格式PDF

  • 申请/专利权人 PANASONIC CORPORATION;

    申请/专利号US201514636812

  • 发明设计人 ARINOBU KANEGAE;

    申请日2015-03-03

  • 分类号H01L51/52;H01L51/50;H01L27/32;H01L29/66;H01L29/786;

  • 国家 US

  • 入库时间 2022-08-21 15:26:53

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