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Manufacturing a Semiconductor Device Using Electrochemical Etching, Semiconductor Device and Super Junction Semiconductor Device
Manufacturing a Semiconductor Device Using Electrochemical Etching, Semiconductor Device and Super Junction Semiconductor Device
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机译:使用电化学蚀刻,半导体器件和超结半导体器件制造半导体器件
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摘要
A trench is formed in a semiconductor substrate between mesas of a first conductivity type. The trench extends from a process surface down to a bottom plane. A semiconductor layer of a second, complementary conductivity type is formed on sidewalls of the trench. At least in the mesas a vertical impurity concentration profile vertical to the process surface is non-constant between the process surface and the bottom plane. A portion of the semiconductor layer in the trench is removed by electrochemical etching. Thereafter, the thickness of the recessed semiconductor layer images the vertical impurity concentration profile in the mesa.
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