BI-DIRECTIONAL ESD DIODE STRUCTURE WITH ULTRA-LOW CAPACITANCE THAT CONSUMES A SMALL AMOUNT OF SILICON REAL ESTATE

摘要

A bi-directional electrostatic discharge diode structure consumes substantially less silicon real estate and provides ultra-low capacitance by utilizing a p− epitaxial layer that touches and lies between an n+ lower epitaxial layer and an n+ upper epitaxial layer. A metal contact touches and lies over a p+ layer, which touches and lies over the n+ upper epitaxial layer.