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REFLECTIVE PHOTOMASK AND PRODUCTION METHOD THEREFOR

机译:反思性照片掩膜及其制作方法

摘要

A reflective photomask (10) comprising: a substrate (11); a multilayer reflective film (12) that is formed upon the substrate (11) and reflects exposure light for lithography, including light having a wavelength of 5-15 nm; an absorption film (14) that is formed upon the multilayer reflective film (12), absorbs the exposure light, and has a circuit pattern (15) or a circuit pattern-forming area formed therein; a light-blocking area (B) that is formed by the removal of some of the multilayer reflective film (12) and some of the absorption film (14) from the substrate (11) on the outer peripheral side of the circuit pattern (15) or the circuit pattern-forming area, and blocks some of the exposure light reflected by the multilayer reflective film (12); and a plurality of protruding sections (1) that is formed at a pitch of no more than 3,000 nm on part of the surface (11b) of the substrate exposed in the light-blocking area (B), and suppresses the reflection of out-of-band light that is included in the exposure light, has a wavelength of 140-800 nm, and is incident to the light-blocking area (B).
机译:反射型光掩模(10),其包括:基板(11);和多层反射膜(12),其形成在基板(11)上并且反射用于光刻的曝光光,包括波长为5-15nm的光;吸收膜(14),其形成在多层反射膜(12)上,吸收曝光光,并且在其中形成有电路图案(15)或电路图案形成区域;通过从电路图案(15)的外周侧上的基板(11)上去除一些多层反射膜(12)和一些吸收膜(14)而形成的遮光区域(B)。 )或电路图案形成区域,并且阻挡由多层反射膜(12)反射的一些曝光光;以及多个突起部(1),其以不大于3,000nm的间距形成在暴露于遮光区域(B)中的基板的表面(11b)的一部分上,并且抑制向外的反射。曝光光中所包含的波长为140-800nm的波段的光入射到遮光区域(B)。

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