A reflective photomask (10) comprising: a substrate (11); a multilayer reflective film (12) that is formed upon the substrate (11) and reflects exposure light for lithography, including light having a wavelength of 5-15 nm; an absorption film (14) that is formed upon the multilayer reflective film (12), absorbs the exposure light, and has a circuit pattern (15) or a circuit pattern-forming area formed therein; a light-blocking area (B) that is formed by the removal of some of the multilayer reflective film (12) and some of the absorption film (14) from the substrate (11) on the outer peripheral side of the circuit pattern (15) or the circuit pattern-forming area, and blocks some of the exposure light reflected by the multilayer reflective film (12); and a plurality of protruding sections (1) that is formed at a pitch of no more than 3,000 nm on part of the surface (11b) of the substrate exposed in the light-blocking area (B), and suppresses the reflection of out-of-band light that is included in the exposure light, has a wavelength of 140-800 nm, and is incident to the light-blocking area (B).
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