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MODIFIED POLYSILAZANE FILM AND METHOD FOR PRODUCING GAS BARRIER FILM

机译:改性聚硅氮烷薄膜及其制备气体阻挡薄膜的方法

摘要

Provided are a modified polysilazane film that is preferable as an intermediate material for forming a predetermined gas barrier film, and a method for producing a gas barrier film having excellent gas barrier properties using such modified polysilazane film as an intermediate material. A modified polysilazane film comprising a substrate and a modified polysilazane layer formed thereon, and a method for producing a gas barrier film obtained through such intermediate material, wherein the modified polysilazane layer has a thickness of a value in the range of 10 to 500 nm, and the modified polysilazane layer has a refractive index of a value in the range of 1.48 to 1.63.
机译:本发明提供作为形成规定的阻气膜的中间材料而优选的改性聚硅氮烷膜,以及使用该改性聚硅氮烷膜作为中间材料的阻气性优异的阻气膜的制造方法。包括基材和在其上形成的改性聚硅氮烷层的改性聚硅氮烷膜,以及通过该中间材料获得的阻气膜的制造方法,其中该改性聚硅氮烷层的厚度为10至500nm,改性聚硅氮烷层的折射率在1.48至1.63的范围内。

著录项

  • 公开/公告号EP2700500A4

    专利类型

  • 公开/公告日2015-02-25

    原文格式PDF

  • 申请/专利权人 LINTEC CORPORATION;

    申请/专利号EP20120829933

  • 发明设计人 NAGANAWA SATOSHI;SUZUKI YUTA;

    申请日2012-07-12

  • 分类号C08J3/28;B29C71/02;C08J7/04;C08J7/12;C09D183/16;

  • 国家 EP

  • 入库时间 2022-08-21 15:06:18

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