METHOD FOR REMOVING BY-PRODUCT OF ETCHING MRAM MATERIAL USING ATOMIC LAYER ETCHING EQUIPMENT

摘要

Disclosed is a method for removing a by-product of etching a magnetic random access memory (MRAM) material, which can remove a MRAM material by minimizing a damage to the MRAM material. The method for removing a by-product of etching a MRAM material according to the present invention comprises: a first step of injecting adsorbing gas to the inside of a reaction chamber, and adsorbing the same onto a redeposition layer; a second step of discharging the remaining gas which has not been adsorbed onto the redeposition layer from the adsorbing gas to the outside of the reaction chamber; a third step of irradiating a reactive ion beam to the redeposition layer onto which the adsorbing gas has been adsorbed, and detaching the redeposition layer; and a fourth step of discharging a detached mixture to the outside of the reaction chamber.;COPYRIGHT KIPO 2016