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METHOD FOR COATING A SUBSTRATE INSIDE A VACUUM CHAMBER BY MEANS OF PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION
METHOD FOR COATING A SUBSTRATE INSIDE A VACUUM CHAMBER BY MEANS OF PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION
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机译:用等离子体辅助化学气相沉积法在真空腔室内涂覆基质的方法
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摘要
The invention relates to a device for depositing a layer on a substrate (2) inside a vacuum chamber (1) by means of plasma-assisted chemical vapor deposition, comprising at least one inlet (3) for introducing at least one gas into the vacuum chamber (1) and at least one magnetron (4) equipped with a target (5; 9) for producing a plasma, wherein the target (5; 9) has a temperature of at least 300 °C at least in one region during the deposition of the layer.
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