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aqueous acid etching solution, texturing method of single crystal and polycrystalline silicon substrate surface of

机译:酸腐蚀液,单晶和多晶硅衬底表面的纹理化方法

摘要

Being the water Acid etching solution which is suited for the texturing of the surface of the silicon substrate of the monocrystal and polycrystals, the gross mass of the solution as a standard, 3 - 10 mass % the hydrofluoric acid; 10 - 35 mass % nitric acid; 5 - 40 mass % sulfuric acid; And 55 - 82 mass % the water, it contains. Being the manner which the surface of the silicon substrate of the monocrystal and polycrystals texturing is done, (1) the monocrystal or step and (2) at least the main surface of 1 of the silicon substrate of polycrystals, is made to contact with above-mentioned water Acid etching solution predetermined time, the step which removes at least the main surface of 1 of the substrate from contact with the step and (3) the water Acid etching solution which etch at least the main surface of 1 of the substrate sufficiently at specified temperature and, it has in order to obtain the surface configuration which consists of the crevice and the convex section. Furthermore, the optical generation of electricity electrolysis cell and the solar battery electrolysis cell are produced making use of the above-mentioned solution and manner. Choice figure It is not
机译:作为适合于使单晶和多晶的硅基板的表面纹理化的水系酸蚀刻液,以溶液的总质量为基准,氢氟酸为3〜10质量%。 10-35质量%硝酸; 5-40质量%硫酸;并且其中包含55-82质量%的水。通过进行单晶化和多晶化的硅衬底的表面的加工,使(1)单晶或台阶和(2)多晶硅衬底的至少1个的主表面与上述接触。上述水酸蚀刻液在规定时间后,与上述工序相接触地除去至少基板1的主面的工序,以及(3)充分蚀刻至少基板1的主面的水酸性蚀刻液。在指定温度下,为了获得由缝隙和凸部组成的表面结构。此外,利用上述解决方案和方式来产生光生电电解槽和太阳能电池电解槽。

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