Laser plasma etching wafer dicing using a UV reactive adhesive film

摘要

laser plasma etching wafer dicing using a UV reactive adhesive film is described. In one example, the method includes forming a mask over the semiconductor wafer. The semiconductor wafer is bonded to a carrier substrate by UV reactive adhesive film. Mask covers the integrated circuit, to protect. Mask is patterned by laser scribing process, whereby I to provide a mask which is patterned with gaps. Patterning exposes an area of the semiconductor wafer between integrated circuits. Thereafter, the semiconductor wafer is etched through the gaps in the mask that is patterned, thereby I to form an integrated circuit which has been singulated. Then, UV reactive adhesive film is irradiated with ultraviolet (UV) light. Then, singulated integrated circuit is removed from the carrier substrate.