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LARGE-AREA SINGLE-CRYSTAL MONOLAYER GRAPHENE FILM AND METHOD FOR PRODUCING THE SAME

机译:大面积单晶单层石墨烯膜及其制备方法

摘要

The present invention relates to a large-area single-crystal monolayer graphene film in which a graphene layer is formed on a single-crystal metal catalyst layer whose crystal plane orientation is (111) optionally on a substrate. In the large-area single crystal monolayer graphene film of the present invention, a single-crystal metal catalyst layer whose crystal plane orientation is (111) can be formed in the shape of a foil, plate, block or tube optionally on a substrate and a graphene layer is formed on the catalyst layer. The present invention also relates to a method for producing a large-area single-crystal monolayer graphene film whose crystal plane orientation is (111) by annealing and chemical vapor deposition of a metal precursor. According to the method of the present invention, a high-quality large-area graphene thin film applicable as a material for transparent electrodes, display devices, semiconductor devices, separation membranes, fuel cells, solar cells, and sensors can be produced on a commercial scale.
机译:大面积单晶单层石墨烯膜技术领域本发明涉及一种在单晶金属催化剂层上任选地在基板上形成石墨烯层的单晶金属催化剂层,该单晶金属催化剂层的晶面取向为(111)。在本发明的大面积单晶单层石墨烯膜中,可以在基板上任选地以箔,板,块或管的形状形成晶面取向为(111)的单晶金属催化剂层。在催化剂层上形成石墨烯层。本发明还涉及通过对金属前体进行退火和化学气相沉积来制造晶面取向为(111)的大面积单晶单层石墨烯膜的方法。根据本发明的方法,可以在商业上生产可用作透明电极,显示装置,半导体装置,分离膜,燃料电池,太阳能电池和传感器的材料的高质量大面积石墨烯薄膜。规模。

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