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III-V COMPOUND AND GERMANIUM COMPOUND NANOWIRE SUSPENSION WITH GERMANIUM-CONTAINING RELEASE LAYER
III-V COMPOUND AND GERMANIUM COMPOUND NANOWIRE SUSPENSION WITH GERMANIUM-CONTAINING RELEASE LAYER
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机译:含锗释放层的III-V族化合物和锗化合物纳米悬浮液
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摘要
A device that includes: a substrate layer; a first set of source/drain component(s) defining an nFET (n-type field-effect transistor) region; a second set of source/drain component(s) defining a pFET (p-type field-effect transistor) region; a first suspended nanowire, at least partially suspended over the substrate layer in the nFET region and made from III-V material; and a second suspended nanowire, at least partially suspended over the substrate layer in the pFET region and made from Germanium-containing material. In some embodiments, the first suspended nanowire and the second suspended nanowire are fabricated by adding appropriate nanowire layers on top of a Germanium-containing release layer, and then removing the Germanium-containing release layers so that the nanowires are suspended.
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