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Group III-Nitride-Based Enhancement Mode Transistor Having a Multi-Heterojunction Fin Structure
Group III-Nitride-Based Enhancement Mode Transistor Having a Multi-Heterojunction Fin Structure
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机译:具有多异质结鳍片结构的基于III族氮化物的增强模式晶体管
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摘要
A Group III-nitride-based enhancement mode transistor includes a multi-heterojunction fin structure. A first side face of the multi-heterojunction fin structure is covered by a first p-type Group III-nitride layer, and a second side face of the multi-heterojunction fin structure is covered by a second p-type Group III-nitride layer.
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