A semiconductor device and a process to form the same are disclosed. The semiconductor device includes a support, an active semiconductor stack including a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer, the first to third semiconductor layers being sequentially stacked on the support, and an electrode on the third semiconductor layer. The first semiconductor layer and the second semiconductor layer provide a buried region in a portion under the electrode, the buried region being filled with a material having a first dielectric constant smaller than a second dielectric constant of the first semiconductor layer and a third dielectric constant of the second semiconductor layer.
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