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CMOS based TX/RX switch

机译:基于CMOS的TX / RX开关

摘要

A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
机译:一种新颖且有用的射频(RF)前端模块(FEM)电路,可提供高线性度和功率效率,并满足现代无线通信标准(例如802.11 WLAN,3G和4G蜂窝标准,蓝牙,ZigBee等)的要求。 FEM电路的配置允许使用常见的,成本相对较低的半导体制造技术,例如标准CMOS工艺。 FEM电路包括功率放大器,该功率放大器由具有高功率电路和低功率电路的一个或多个子放大器组成,并且其输出被组合以产生总的期望功率增益。具有以新颖配置布置的初级和次级绕组的集成式多抽头变压器提供了有效的功率组合,并将各个子放大器产生的功率传输到天线。

著录项

  • 公开/公告号US9312820B2

    专利类型

  • 公开/公告日2016-04-12

    原文格式PDF

  • 申请/专利权人 DSP GROUP LTD.;

    申请/专利号US201314034175

  • 申请日2013-09-23

  • 分类号H04B1/44;H04B1;H04B1/38;H03F1/56;H01F38/14;H03F3/213;H03F3/195;H02M3/04;H01F27/28;H01F27/29;H01F38;H03F3/19;H03F3/21;H03F3/68;H03F3/193;H01F19/04;H03F1/02;H03F3/45;

  • 国家 US

  • 入库时间 2022-08-21 14:32:46

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