DATA RETENTION CONTROL CIRCUIT, DATA WRITING METHOD, DATA READING METHOD, METHOD OF TESTING CHARACTERISTICS OF FERROELECTRIC STORAGE DEVICE, AND SEMICONDUCTOR CHIP

摘要

A data retention control circuit includes a data retention part having first and second logic circuits, a ferroelectric storage part having first and second ferroelectric device parts, first and second transmission control parts, and a test voltage supply control part. The first transmission control part has first and second transmission control circuits controlling first and second logic signals to the first and second ferroelectric device parts, respectively. The second transmission control part has third and fourth transmission control circuits controlling transmission of first and second storage data from the first and second ferroelectric device part to the second and first logic circuits, respectively. The test voltage supply control part has first and second test voltage supply control circuits controlling supplies of first and second test voltages to the second and first logic circuit, respectively.