首页> 外国专利> Integrated circuit with nanowire sensors comprising a shielding layer, sensing apparatus, measuring method and manufacturing method

Integrated circuit with nanowire sensors comprising a shielding layer, sensing apparatus, measuring method and manufacturing method

机译:具有包括屏蔽层的纳米线传感器的集成电路,感测设备,测量方法和制造方法

摘要

An integrated circuit (100) comprising a substrate (110); an insulating layer (120) over said substrate; and a first nanowire element (140a) and a second nanowire element (140b) adjacent to said first nanowire element on said insulating layer; wherein the first nanowire element is arranged to be exposed to a medium comprising an analyte of interest, and wherein the second nanowire element is shielded from said medium by a shielding layer (150) over said second nanowire element. A sensing apparatus including such an IC, a sensing method using such an IC and a method of manufacturing such an IC are also disclosed.
机译:一种集成电路( 100 ),包括衬底( 110 );在所述衬底上的绝缘层( 120 );以及与所述第一纳米线元件相邻的第一纳米线元件( 140 a )和第二纳米线元件( 140 b )在所述绝缘层上的纳米线元件;其中所述第一纳米线元件被布置成暴露于包含感兴趣的分析物的介质,并且其中所述第二纳米线元件被所述第二纳米线元件上方的屏蔽层( 150 )与所述介质屏蔽。还公开了一种包括这种IC的感测设备,使用这种IC的感测方法以及制造这种IC的方法。

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