首页>
外国专利>
Microwave anneal (MWA) for defect recovery
Microwave anneal (MWA) for defect recovery
展开▼
机译:微波退火(MWA)用于缺陷修复
展开▼
页面导航
摘要
著录项
相似文献
摘要
The embodiments of processes and structures described above provide mechanisms for annealing defects by microwave anneal (MWA). MWA causes ionic/atomic (ionic and/or atomic) polarization, electronic polarization, and/or interfacial polarization in a substrate with dopants, damages, and interfaces in crystalline structures. The polarizations make the local temperatures higher than the substrate temperature. As a result, MWA can remove damages at a relatively low substrate temperature than other anneal mechanisms and is able to prevent undesirable dopant diffusion. The relatively low substrate temperature also makes MWA compatible with advanced processing technologies which demands lower substrate temperatures during front-end processing. MWA used in annealing defects (or damages) created in forming source and drain regions improves NMOS transistor performance.
展开▼