首页> 外国专利> PP3 shape designs for shield domain control to improve either skip track erasure (STE) or write performance for perpendicular magnetic recording (PMR)

PP3 shape designs for shield domain control to improve either skip track erasure (STE) or write performance for perpendicular magnetic recording (PMR)

机译:PP3形状设计用于屏蔽域控制,以改善跳过磁道擦除(STE)或垂直磁记录(PMR)的写入性能

摘要

A shield structure for a PMR writer is disclosed and features a first trailing shield on a write gap, and a second (PP3) trailing shield on the first trailing shield and magnetically connected to the main pole layer. From a top-down view along the down-track direction, the PP3 trailing shield has various shapes to provide shape anisotropy such that following hard magnet or reverse magnet initialization, PP3 trailing shield magnetic orientation has a stable three domain configuration thereby minimizing skip track erasure (STE) or improving area density capability (ADC). At least one sloped side is introduced that forms an angle 90 degrees with the PP3 trailing shield backside. In other embodiments, a thinner leading shield may be used to improve STE. The PP3 trailing shield may have a dome shape or a planar shape from a down-track cross-sectional view.
机译:公开了一种用于PMR写入器的屏蔽结构,其特征在于在写入间隙上具有第一尾随屏蔽层,并且在第一尾随屏蔽层上并与主磁极层磁性连接的第二(PP 3 )尾随屏蔽层。从沿着向下方向的俯视图看,PP 3 尾随屏蔽罩具有各种形状,可提供形状各向异性,从而在硬磁或反向磁体初始化之后,PP 3 尾随屏蔽磁取向具有稳定的三畴配置,从而最大程度地减少了跳过磁道擦除(STE)或提高了区域密度能力(ADC)。引入了至少一个倾斜面,该倾斜面与PP 3 尾随屏蔽背面形成了> 90度的角度。在其他实施例中,可以使用更薄的前导屏蔽来改善STE。从后视截面看,PP 3 尾随屏蔽件可以具有圆顶形状或平面形状。

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