PREPARATION OF WIDEBAND TIO2, ANTIREFLECTION COATING FOR SILICON SOLAR CELLS

摘要

The present invention relates to a process of preparing wideband T1O2 anti-reflection coated silicon solar cells having minimum reflectance spectrum in the UVC, UVB, UVA and in the visible regions and product thereof. The process involves texturization of a silicon substrate to form a texturized silicon substrate and deposition of TÃO2 sol -gel having témplate mixed that leads to T1O2 nanoparticles with modified dielectric strength on the texturized silicon substrate to form TiCVtexturized Silicon substrate. Finally post heating of the T¡02/texturized Silicon substrate was carried out in the temperature range between 300°C - 350°C to form wideband Ti02 antireflection coated silicon solar cells.