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Preventing permanent protection against unintentional writing in non-volatile memory

机译:防止永久性保护以防止意外写入非易失性存储器

摘要

An integrated circuit device having a nonvolatile programmable memory comprising: a nonvolatile memory (106); a logical memory control and programming (104) coupled to the nonvolatile memory (106) and adapted to write data to the nonvolatile memory (106), wherein said control logic memory and programming (104) It is operable to determine whether you are performing a function of write protection from digital signals supplied to at least one inlet (120a..c, 114); at least one input connection of multiple function (120c; A0) coupled to the control logic memory and programming (104), wherein the at least one input connection of multiple function (120c; A0) is used to distinguish between permanent write protection and temporary data written to non-volatile memory; in which protection against permanent writing is enabled when a voltage in the at least one input connection of multiple function (120c; A0) is less than a first voltage value and protection against temporary writing is enabled when the tension in the at least one input connection of multiple function (120c; A0) is larger than a second voltage value, the second value being greater stress than the first voltage value; and wherein the write-protect can not be enabled when the voltage at the at least one input connection of multiple function (120c; A0) is equal to or greater than the first voltage value and less than or equal to the second value tensile.
机译:一种具有非易失性可编程存储器的集成电路器件,包括:非易失性存储器(106);以及非易失性存储器(106)。逻辑存储器控制和编程(104),其耦合到非易失性存储器(106),并适于将数据写入非易失性存储器(106),其中所述控制逻辑存储器和编程(104)可用于确定您是否正在执行具有写保护功能,不受提供给至少一个入口(120a..c,114)的数字信号的影响;至少一个多功能输入(120c; A0)的输入连接到控制逻辑存储器和编程(104),其中至少一个多功能输入(120c; A0)的输入连接用于区分永久写保护和临时写保护。数据写入非易失性存储器;其中当多功能的至少一个输入连接中的电压(120c; A0)小于第一电压值时,启用永久写入保护;当至少一个输入连接中的张力时,启用临时写入保护(120c; A0)的乘积大于第二电压值,第二值的应力大于第一电压值;并且其中当多功能(120c; A0)的至少一个输入连接处的电压等于或大于第一电压值并且小于或等于第二值拉伸时,不能启用写保护。

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