首页> 外国专利> PLASMA PROCESSING SYSTEMS WITH MECHANISMS FOR CONTROLLING TEMPERATURES OF COMPONENTS

PLASMA PROCESSING SYSTEMS WITH MECHANISMS FOR CONTROLLING TEMPERATURES OF COMPONENTS

机译:具有控制元件温度机制的等离子处理系统

摘要

the plasma processing system is described with improved temperature control components. The system may include a plasma processing chamber having a chamber wall. The system also may include an electrode disposed within the plasma processing chamber. In addition, the system may include a support member disposed in the plasma processing chamber to support the electrode. The system may also include a support plate disposed outside the chamber wall. In addition, the system may include a cantilever disposed through the chamber wall to a support member coupled to the support plate. The system may also include a lift plate disposed between the chamber wall and the support plate. In addition, the system may comprise a heat resistant coupling mechanism for mechanically coupling the lift plate to the support plate.
机译:描述了具有改进的温度控制组件的等离子体处理系统。该系统可以包括具有腔室壁的等离子体处理腔室。该系统还可以包括设置在等离子体处理室内的电极。另外,该系统可以包括布置在等离子体处理室中以支撑电极的支撑构件。该系统还可包括设置在腔室壁外部的支撑板。另外,该系统可以包括悬臂,该悬臂穿过腔室壁设置到连接至支撑板的支撑构件。该系统还可包括设置在腔室壁和支撑板之间的提升板。另外,该系统可以包括用于将提升板机械地耦合到支撑板的耐热耦合机构。

著录项

  • 公开/公告号KR101581066B1

    专利类型

  • 公开/公告日2015-12-30

    原文格式PDF

  • 申请/专利权人 램 리써치 코포레이션;

    申请/专利号KR20107027712

  • 发明设计人 타판 제임스 이;

    申请日2009-06-10

  • 分类号H01L21/3065;

  • 国家 KR

  • 入库时间 2022-08-21 14:15:24

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