STABILITY ENHANCEMENTS IN METAL OXIDE SEMICONDUCTOR THIN FILM TRANSISTORS

摘要

The plasma hydrogenation region in the dielectric layer of the semiconductor thin film transistor (TFT) structure improves the stability of the TFT. The TFT is a multilayer structure including an electrode, a dielectric layer disposed on the electrode, and a metal oxide semiconductor on the dielectric. Exposure of the dielectric layer to the hydrogen-containing plasma prior to deposition of the semiconductor creates a plasma hydrogenation zone at the semiconductor-dielectric interface. The plasma hydrogenation region includes hydrogen whose concentration is reduced from the semiconductor / dielectric interface to the bulk of one or both of the dielectric layer and the semiconductor layer.;