Method for producing group IV metal oxide film

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method in which a group IV metal oxide film useful as a semiconductor element and an optical element is manufactured at low temperature.SOLUTION: A material for film production is obtained such that a vinylene diamide complex shown by general formula (1) is reacted with one or more oxidizing agents chosen from a group consisting of oxygen gas, air, ozone, water and hydrogen peroxide. In the formula, M denotes a titanium atom or a silicon atom; Rand Reach independently denote a 3-12C alkyl group; Rand Reach independently denote a hydrogen atom or a 1-4C alkyl group; Rdenotes a 1-12C alkyl group that may be substituted by a fluorine atom.