Metal nanoparticle paste, bonding material containing the same, and semiconductor device using the same

摘要

PROBLEM TO BE SOLVED: To provide a metal nanoparticle paste which is a bonding material used in a semiconductor device, and capable of forming a bonding layer having a high bonding strength, at low temperature (specifically, 400°C or lower).SOLUTION: There is provided a metal nanoparticle paste which contains 99.9-70 mass% of Cu nanoparticles and 0.1-30 mass% of Sn nanoparticles with respect to the total metal nanoparticles. There is also provided a metal nanoparticle paste according to the above metal nanoparticle paste, in which a percent ratio of the number of pieces of metal nanoparticles whose diameters are in a range of 1-1,000 nm, with respect to the total number of the metal particles, is 99% or more.