Optoelectronic Semiconductor Device With Ferromagnetic Domains

摘要

An optoelectronic semiconductor device with one or more ferromagnetic domains and method for processing an optoelectronic semiconductor device and/or devices with the ferromagnetic domain(s) is described. In one embodiment, the optoelectronic semiconductor device can include a semiconductor structure having a substrate, an n-type contact layer formed over the substrate, an active layer formed over the n-type contact layer, and a p-type contact layer formed over the active layer; and at least one ferromagnetic domain located on the semiconductor structure. The method for processing can include moving and/or assembling the optoelectronic semiconductor device(s) into a system.