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Replacement body FinFET for improved junction profile with gate self-aligned junctions
Replacement body FinFET for improved junction profile with gate self-aligned junctions
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机译:替换体FinFET可通过栅极自对准结来改善结轮廓
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摘要
After forming an epitaxial semiconductor layer on portions of a semiconductor located on opposite sides of a sacrificial gate structure, dopants from the epitaxial semiconductor layer are diffused into the semiconductor fin to form a dopant-containing semiconductor fin. A sacrificial gate stack is removed to provide a gate cavity that exposes a portion of the dopant-containing semiconductor fin. The exposed portion of the dopant-containing semiconductor fin is removed to provide an opening underneath the gate cavity. A channel which is undoped or less doped than remaining portions of the dopant-containing semiconductor fin is epitaxially grown at least from the sidewalls of the remaining portions of the dopant-containing semiconductor fin. Abrupt junctions are thus formed between the channel region and the remaining portions of the dopant-containing semiconductor fin.
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