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VOLTAGE BIASED METAL SHIELDING AND DEEP TRENCH ISOLATION FOR BACKSIDE ILLUMINATED (BSI) IMAGE SENSORS
VOLTAGE BIASED METAL SHIELDING AND DEEP TRENCH ISOLATION FOR BACKSIDE ILLUMINATED (BSI) IMAGE SENSORS
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机译:背照式(BSI)图像传感器的电压偏置金属屏蔽和深沟槽隔离
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摘要
A backside illuminated (BSI) image sensor for biased backside deep trench isolation (BDTI) and/or biased backside shielding is provided. A photodetector is arranged in a semiconductor substrate, laterally adjacent to a peripheral opening in the semiconductor substrate. An interconnect structure is arranged under the semiconductor substrate. A pad structure is arranged in the peripheral opening, and protrudes through a lower surface of the peripheral opening to the interconnect structure. A conductive layer is electrically coupled to the pad structure, and extends laterally towards the photodetector from over the pad structure. A method for manufacturing the BSI image sensor is also provided.
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