State change detection for two-terminal memory during application of a state-changing stimulus

摘要

A detection circuit that can detect a two-terminal memory cell changing state. For example, in response to electrical stimuli, a memory cell will change state (e.g., to a highest resistance state), but existing techniques do not detect this state change until after the stimuli is completed and a subsequent sensing operation (e.g., read pulse) is performed. The detection circuit can detect the state change during application of the electrical stimuli that causes the state change.