首页> 外国专利> Embedded circuit patterning feature selective electroless copper plating

Embedded circuit patterning feature selective electroless copper plating

机译:嵌入式电路图案化具有选择性化学镀铜的功能

摘要

Embodiments describe the selective electroless plating of dielectric layers. According to an embodiment, a dielectric layer is patterned to form one or more patterned surfaces. A seed layer is then selectively formed along the patterned surfaces of the dielectric layer. An electroless plating process is used to deposit metal only on the patterned surfaces of the dielectric layer. According to an embodiment, the dielectric layer is doped with an activator precursor. Laser assisted local activation is performed on the patterned surfaces of the dielectric layer in order to selectively form a seed layer only on the patterned surfaces of the dielectric layer by reducing the activator precursor to an oxidation state of zero. According to an additional embodiment, a seed layer is selectively formed on the patterned surfaces of the dielectric layer with a colloidal or ionic seeding solution.
机译:实施例描述了介电层的选择性化学镀。根据一实施例,介电层被图案化以形成一个或多个图案化的表面。然后沿着介电层的图案化表面选择性地形成种子层。化学镀工艺用于仅在介电层的图案化表面上沉积金属。根据一个实施例,介电层掺杂有活化剂前体。在介电层的图案化表面上执行激光辅助的局部活化,以便通过将活化剂前体还原为零的氧化态而仅在介电层的图案化表面上选择性地形成种子层。根据另一实施例,利用胶体或离子种子溶液选择性地在电介质层的图案化表面上形成种子层。

著录项

  • 公开/公告号US9646854B2

    专利类型

  • 公开/公告日2017-05-09

    原文格式PDF

  • 申请/专利权人 INTEL CORPORATION;

    申请/专利号US201414229777

  • 申请日2014-03-28

  • 分类号H01L21/768;H01L23/522;H01L21/48;H05K3/10;H05K3/18;C23C18/16;C23C18/20;C23C18/30;H01L23/498;H05K3;H05K3/04;C23C18/38;

  • 国家 US

  • 入库时间 2022-08-21 13:41:48

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号