The present invention discloses a three-dimensional one-time-programmable memory (3D-OTP) comprising an off-die read/write-voltage generator (VR/VW-generator). It comprises at least a 3D-array die and at least a peripheral-circuit die. At least a VR/VW-generator of the 3D-OTP arrays is located on the peripheral-circuit die instead of the 3D-array die. The VR/VW-generator generates at least a read voltage and/or a write voltage different from a supply voltage.
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机译：本发明公开了一种三维一次性可编程存储器（3D-OTP），其包括芯片外读/写电压发生器（V R / V W -发电机）。它包括至少一个3D阵列芯片和至少一个外围电路芯片。 3D-OTP阵列的至少V R / V W 发生器位于外围电路芯片上，而不是3D阵列芯片上。 V R / V W 发生器至少产生与电源电压不同的读取电压和/或写入电压。
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