首页> 外国专利> SYSTEM AND METHOD BASED ON LOW PRESSURE CHEMICAL VAPOR DEPOSITION FOR FABRICATING PEROVSKITE FILM

SYSTEM AND METHOD BASED ON LOW PRESSURE CHEMICAL VAPOR DEPOSITION FOR FABRICATING PEROVSKITE FILM

机译:基于低压化学气相沉积制备钙钛矿薄膜的系统和方法

摘要

A system and method for fabricating a perovskite film is provided the system including a housing for use as a CVD furnace having first and second sections coupled with first and second temperature control units respectively. The first and second sections correspond substantially to the upstream and downstream of gases respectively. One or more substrates are loaded in the second section and controlled by the second temperature control unit and an evaporation unit containing an organic halide material is loaded in the first section and controlled by the first temperature control unit. Each of the substrates is pre deposited with a metal halide material. The inside of the housing is pumped down to a low pressure.
机译:提供了一种用于制造钙钛矿膜的系统和方法,该系统包括用作CVD炉的壳体,该壳体具有分别与第一和第二温度控制单元耦合的第一和第二部分。第一部分和第二部分分别基本上对应于气体的上游和下游。一个或多个基板被装载在第二部分中并由第二温度控制单元控制,并且包含有机卤化物材料的蒸发单元被装载在第一部分中并由第一温度控制单元控制。每个基板都预先沉积有金属卤化物材料。壳体内部被抽至低压。

著录项

  • 公开/公告号IN201717004951A

    专利类型

  • 公开/公告日2017-05-05

    原文格式PDF

  • 申请/专利权人

    申请/专利号IN201717004951

  • 发明设计人 QI YABING;LEYDEN MATTHEW RYAN;

    申请日2017-02-10

  • 分类号C23C16/46;C30B25/00;C23C16/448;

  • 国家 IN

  • 入库时间 2022-08-21 13:38:27

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