首页> 外国专利> METHOD OF PREPARING TRIBOELECTRIC FILM WITH INTAGLIATED, EMBOSSED OR DUAL EMBOSSED PATTERN, TRIBOELECTRIC FILM PREPARED THEREBY, AND HIGH-PERFORMANCE TRIBOELECTRIC NANOGENERATOR COMPRISING SAME

METHOD OF PREPARING TRIBOELECTRIC FILM WITH INTAGLIATED, EMBOSSED OR DUAL EMBOSSED PATTERN, TRIBOELECTRIC FILM PREPARED THEREBY, AND HIGH-PERFORMANCE TRIBOELECTRIC NANOGENERATOR COMPRISING SAME

机译:具有无凸纹,凸纹或双凸纹图案的三层薄膜的制备方法,由此制备的三层薄膜以及由其组成的高性能三层纳米电容器

摘要

The present invention relates to a method for preparing a triboelectric film having an intagliated, embossed or dual embossed pattern on the basis of a colloid single-layer film formed by forced assembly on a substrate, a triboelectric film prepared thereby, and a high-performance triboelectric nanogenerator comprising the same. When applying a triboelectric film having an intagliated, embossed or dual embossed pattern prepared by the preparation method of the present invention to a triboelectric nanogenerator, it is possible to achieve not only excellent electrical performances, but also moisture resistance and high mechanical stability in a large scale.
机译:本发明涉及一种基于通过在基板上强制组装而形成的胶体单层膜来制备具有凹版,压纹或双纹图案的摩擦电膜的方法,由此制备的摩擦电膜以及高性能包括它的摩擦电纳米发电机。当将通过本发明的制备方法制备的具有凹版,压纹或双压纹图案的摩擦电膜应用于摩擦电纳米发电机时,不仅可以实现优异的电性能,而且可以大幅度地获得耐湿性和高机械稳定性。规模。

著录项

  • 公开/公告号WO2017078301A1

    专利类型

  • 公开/公告日2017-05-11

    原文格式PDF

  • 申请/专利号WO2016KR11790

  • 发明设计人 CHO JINHAN;JANG DONG-JIN;

    申请日2016-10-20

  • 分类号H02N1/04;B32B3/30;B32B27;B01J2/30;C08J3/24;C08G77/04;

  • 国家 WO

  • 入库时间 2022-08-21 13:31:09

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号