首页> 外国专利> POWER SUPPLY CIRCUIT DEVICE USING NEGATIVE THRESHOLD VOLTAGE FIVE-TERMINAL NMOS TRANSISTOR ELEMENT WITH MULTI-STEP CONNECTION OF POWER AMPLIFICATION FOR THREE-PHASE APPLICATION

POWER SUPPLY CIRCUIT DEVICE USING NEGATIVE THRESHOLD VOLTAGE FIVE-TERMINAL NMOS TRANSISTOR ELEMENT WITH MULTI-STEP CONNECTION OF POWER AMPLIFICATION FOR THREE-PHASE APPLICATION

机译:负阈值电压五端NMOS晶体管元件与多级功率放大的多级连接的电源电路装置,用于三相应用

摘要

The present invention relates to a voltage converter for converting from alternating current and direct current power sources with high voltage into a direct current power source with low voltage. The voltage converter does not have an additional configuration of a common transformation circuit and a configuration of a Zener diode, and has a configuration of a depletion n-type metal oxide semiconductor (NMOS) field effect transistor (FET) having negative voltage between a gate and a source (negative Vgs). In other words, the voltage converter includes a negative threshold voltage five-terminal NMOS FET element. Accordingly, a low cost circuit can be realized by removing the configuration of the common transformation circuit (100) and a circuit region of the Zener diode (104), so as to remove the area occupied in the common transformation circuit (100) and the circuit region of the Zener diode (104).;COPYRIGHT KIPO 2017
机译:电压转换器技术领域本发明涉及一种用于将高压交流电和直流电源转换为低压直流电的电压转换器。电压转换器不具有公共变换电路的附加配置和齐纳二极管的配置,而是具有栅极之间具有负电压的耗尽型n型金属氧化物半导体(NMOS)场效应晶体管(FET)的配置和一个源(负Vgs)。换句话说,电压转换器包括负阈值电压五端子NMOS FET元件。因此,可以通过去除公共变换电路(100)的结构和齐纳二极管(104)的电路区域,从而去除公共变换电路(100)和电路中所占据的面积,来实现低成本的电路。齐纳二极管(104)的电路区域。; COPYRIGHT KIPO 2017

著录项

  • 公开/公告号KR20170033216A

    专利类型

  • 公开/公告日2017-03-24

    原文格式PDF

  • 申请/专利权人 KANG HEE BOK;

    申请/专利号KR20150131293

  • 发明设计人 KANG HEE BOKKR;

    申请日2015-09-16

  • 分类号H02M7/06;

  • 国家 KR

  • 入库时间 2022-08-21 13:27:52

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号