- Garphene-Semiconductor Schottky Junction Photodetector of having tunable Gain

摘要

A photoelectric device using graphene is disclosed. A monolayer graphene channel is formed on a semiconductor substrate doped with an n-type. One end unit of the graphene channel is connected to a source electrode, and is physically separated from a drain electrode. The light passing through a gate insulating layer and a gate electrode generates an electron-hole pair in an interface of the graphene channel and the semiconductor substrate forming Schottky junction. An optical current is formed by a Schottky barrier. In addition, the Schottky barrier is changed by applied gate voltage, thereby changing the optical current.