TREATMENT OF GATE DIELECTRIC FOR MAKING HIGH PERFORMANCE METAL OXIDE AND METAL OXYNITRIDE THIN FILM TRANSISTORS

摘要

Embodiments of the present invention generally include TFTs and methods for their manufacture. The gate dielectric layer in the TFT can affect the threshold voltage of the TFT. The threshold voltage can be improved by treating the gate dielectric layer prior to depositing the active channel material. One method of treating the gate dielectric involves exposing the gate dielectric layer to N ₂ O gas. Another method of treating the gate dielectric involves exposing the gate dielectric layer to a N ₂ O plasma. Although silicon oxide is not practical as a gate dielectric for silicon-based TFTs, it may improve the threshold voltage when used in metal oxide TFTs. By treating the gate dielectric and / or using silicon oxide, the threshold voltage of the TFTs can be improved.