Metal-ceramic substrate and method for producing such a metal-ceramic substrate and arrangement of such metal-ceramic substrates

摘要

Metal-ceramic substrate comprising at least one ceramic layer (2) which is provided on at least one surface side (2.1) with at least one metallization (3), which is structured to form at least one connection surface (5) for connecting at least one semiconductor device, wherein the at least one connection surface (5) has a central connection surface section (5.1) and an insulating surface section (5.2) surrounding it, wherein an insulation layer (6) made of a dielectric filling material is applied to the insulation surface section (5.2) at least in sections, and wherein the layer thickness of the metallization (3) the connection surface (5) in the region of the connection surface section (5.1) is larger than in the region of the insulation surface section (5.2).