The method, the replacement of a dummy - gate - structure by a gate - structure, which contains a ferroelectric material, and associated semiconductor structure

摘要

A method which comprises:Providing a substrate (101), which contains a semiconductor material;Dimpling of a first region (102) of the substrate (101) relative to a second region (103) of the substrate (101);Form of an active area (204) of a first transistor (620, 720) in the recessed first region (102) of the substrate (101);Form of an active area (205) of a second transistor (621, 721) in the second region (103) of the substrate (101);Forming a first dummy - gate - structure (320) by means of the active region (204) of the first transistor (620, 720);Forming a second dummy - gate - structure (321) via the active region (205) of the second transistor (621, 721);Replacement of at least a part of the first dummy - gate - structure (320) by at least a part of a gate - structure (601, 701) of the first transistor (620); andReplacement of at least a portion of the second dummy - gate - structure (321) by at least a part of a gate - structure (501) of the second transistor (621, 721);the gate - structure (601, 701) of the first transistor (620, 720) contains a ferroelectric material and the gate - structure (501) of the second transistor (621, 721) contains no ferroelectric material.