A transistor model, method for computer-based determination of a characteristic of a transistor, apparatus and computer-readable storage medium for carrying out the method

摘要

According to various embodiments, a transistor model for a computer-based simulation of a field effect transistor may include: a first electrical network coupled between a drain node, a source node, and a gate node, wherein the first electrical network is configured, an electrical characteristic the field effect transistor in forward operation to represent; a second electrical network coupled in parallel with the first electrical network and between the source node and the drain node, the second electrical network being configured to represent an electrical characteristic of the field effect transistor in a commutation mode and / or an inverse mode; wherein the second electrical network includes: a controlled first source representing a parasitic junction of the field effect transistor; at least one controlled second source representing a charge injection dependent parasitic impedance of the field effect transistor; wherein the controlled first source and the at least one controlled second source are coupled in parallel; and wherein the controlled first source and the at least one controlled second source are coupled via at least one parameter such that a charge injection from the parasitic transition into the parasitic impedance is taken into account.