SEMICONDUCTOR MICRO-HOLLOW CATHODE DISCHARGE DEVICE FOR PLASMA JET GENERATION

摘要

A micro-hollow cathode discharge device (100). The device (100) includes a first electrode layer (102) comprising a first electrode. A hole (110) is disposed in the first electrode layer (102). The device (100) also includes a dielectric layer (104) having a first surface that is disposed on the first electrode layer (102). The hole (110) continues from the first electrode layer (102) through the dielectric layer (104). The device also includes a semi-conducting layer (106) disposed on a second surface of the dielectric layer (104) opposite the first surface. The semi-conducting layer (106) is a semiconductor material that spans across the hole (110) such that the hole (110) terminates at the semi-conducting layer (106). The device also includes a second electrode layer (108) disposed on the semi-conducting layer (106) opposite the dielectric layer (104).