RESIST UNDERLAY FILM MATERIAL, PATTERN FORMING METHOD, RESIST UNDERLAY FILM FORMING METHOD, AND COMPOUND FOR RESIST UNDERLAY FILM MATERIAL

摘要

PROBLEM TO BE SOLVED: To provide: a resist underlay film material that can form a resist underlay film which can be cured by irradiation with high energy rays, and, in a fine patterning operation by a multilayer resist technique in a semiconductor device production process, has excellent embedding/flattening characteristics, and suitable etching resistance and optical characteristics; a pattern forming method using a resist underlay film material; a resist underlay film forming method; and a novel compound suitably used for a resist underlay film material.SOLUTION: A resist underlay film material contains (A) one or more compound represented by general formula (1) and (B) organic solvent, and is used for a multilayer resist technique (where W is a C2 to C50 n-valent organic group; X is a monovalent organic group represented by a specific formula; and n is an integer of 1 to 10).SELECTED DRAWING: Figure 1