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Method and apparatus using transfer function for predicting resistance shift and / or noise of resistance based memory
Method and apparatus using transfer function for predicting resistance shift and / or noise of resistance based memory
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机译:使用传递函数预测基于电阻的存储器的电阻偏移和/或噪声的方法和装置
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摘要
Two or more workload indicators affecting a memory cell of a resistance-based, non-volatile memory are measured. The two or more workload indicators are applied to a transfer function that predicts a resistance shift and/or resistance noise variance in response to the two or more workload indicators. A result of the transfer function is applied to shift and/or determine a threshold resistance used for at least one of a program operation and a read operation affecting the memory cell. An error rate of the memory cell is reduced as a result.
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