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ESD protection circuit for providing cross-domain ESD protection

机译:ESD保护电路,用于提供跨域ESD保护

摘要

A semiconductor device and method. The device includes a first domain and a second domain each having a power rail and a ground rail. The device further includes a signal line connected between the first domain and the second domain. The device also includes an electrostatic discharge protection circuit for providing cross-domain ESD protection. The protection circuit includes a blocking transistor connected between the first domain power rail and the signal line. The protection circuit also includes a power rail clamp connected between the first domain power rail and the first domain ground rail. The power rail clamp is operable to apply a control signal to a gate of the blocking transistor to switch it on during normal operation and to switch it off during an ESD event. The power rail clamp is operable during the ESD event to conduct an ESD current.
机译:半导体器件和方法。该设备包括第一域和第二域,每个域都有一个电源轨和一个接地轨。该设备还包括连接在第一域和第二域之间的信号线。该设备还包括用于提供跨域ESD保护的静电放电保护电路。该保护电路包括连接在第一域电源轨和信号线之间的阻挡晶体管。该保护电路还包括连接在第一域电源轨和第一域接地轨之间的电源轨夹。功率轨钳位可操作以将控制信号施加到阻挡晶体管的栅极,以在正常操作期间将其接通,并在ESD事件期间将其断开。在ESD事件期间,电源导轨夹可操作以传导ESD电流。

著录项

  • 公开/公告号US10074647B2

    专利类型

  • 公开/公告日2018-09-11

    原文格式PDF

  • 申请/专利权人 NXP B.V.;

    申请/专利号US201615013070

  • 发明设计人 DA-WEI LAI;DOLPHIN ABESSOLO BIDZO;

    申请日2016-02-02

  • 分类号H01L27/02;H02H9/04;H01L27/092;

  • 国家 US

  • 入库时间 2022-08-21 13:06:14

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