首页> 外国专利> PIEZOELECTRIC MEMS SENSOR, SUCH AS FORCE, PRESSURE, DEFORMATION SENSOR OR MICROPHONE, WITH IMPROVED SENSITIVITY

PIEZOELECTRIC MEMS SENSOR, SUCH AS FORCE, PRESSURE, DEFORMATION SENSOR OR MICROPHONE, WITH IMPROVED SENSITIVITY

机译:压电式MEMS传感器(如力,压力,变形传感器或麦克风),其灵敏度得到了改善

摘要

A MEMS sensor, in particular a microphone, of a piezoelectric type, formed in a membrane of semiconductor material accommodating a compliant portion, which extends from a first surface to a second surface of the membrane. The compliant portion has a Young's modulus lower than the rest of the membrane. A sensitive region having piezoelectric material extends on the first surface, over the compliant portion and is fixed at its ends to the membrane on opposite sides of the compliant portion. A third area of the membrane, arranged between the compliant portion and the second surface, forms a hinge element.
机译:在容纳顺应部分的半导体材料的膜中形成压电式的MEMS传感器,特别是压电式麦克风,该传感器从膜的第一表面延伸到第二表面。柔顺部分的杨氏模量低于膜的其余部分。具有压电材料的敏感区域在第一表面上在柔性部分上延伸,并在其端部固定到柔性部分相对两侧的膜上。膜的第三区域,布置在柔性部分和第二表面之间,形成铰链元件。

著录项

  • 公开/公告号US2018124521A1

    专利类型

  • 公开/公告日2018-05-03

    原文格式PDF

  • 申请/专利权人 STMICROELECTRONICS S.R.L.;

    申请/专利号US201715629518

  • 发明设计人 DOMENICO GIUSTI;SEBASTIANO CONTI;

    申请日2017-06-21

  • 分类号H04R17/02;B81C1;B81B3;H01L41/113;H01L41/312;H01L41/04;H04R31;

  • 国家 US

  • 入库时间 2022-08-21 13:01:40

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