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Memory interface design having controllable internal and external interfaces for bypassing defective memory
Memory interface design having controllable internal and external interfaces for bypassing defective memory
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机译:存储器接口设计具有可控制的内部和外部接口,用于绕过有缺陷的存储器
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摘要
An improved memory interface design is provided. In some implementations, an integrated circuit includes a first cache memory unit, a second cache memory unit located in parallel with the first cache memory unit, and a floorsweeping module configured to be able to select between the first cache memory unit and the second cache memory unit for cache requests, wherein the selection is based at least partially on the presence or absence of one or more manufacturing defects in the first cache memory unit or the second cache memory unit.
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