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Die-bonding layer formation film, processed product having die-bonding layer formation film attached thereto, and semiconductor device
Die-bonding layer formation film, processed product having die-bonding layer formation film attached thereto, and semiconductor device
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机译:芯片接合层形成膜,贴附有芯片接合层形成膜的处理物以及半导体装置
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摘要
A die-bonding layer formation film to be used for fixing a processed product to an adherend, includes an adhesive layer, wherein, the storage elastic modulus has a local minimum value at a temperature within a range of 80° C. to 150° C., wherein the adhesive layer has a shear strength to a peeling strength test substrate of 20 N/2 mm□ [N/(2 mm×2 mm)] or more and 50 N/2 mm□ [N/(2 mm×2 mm)] or less, wherein the shear strength is measured after the processed product is placed above the peeling strength test substrate via the die-bonding layer formation film and the die-bonding layer formation film on the peeling strength test substrate is heated at 175° C. for 1 hour and then further maintained under an environment of 250° C. for 30 seconds. Bubbles (voids) are unlikely to grow at the boundary between the adhesive layer and an adherend even when subjected to thermal history.
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机译:用于将加工产品固定至被粘物的芯片接合层形成膜包括粘合剂层,其中,储能弹性模量在80℃至150℃的温度范围内具有局部最小值。 ,其中粘合剂层对剥离强度测试基材的剪切强度为20 N / 2 mm □ Sup> [N /(2 mm×2 mm)]以上且50 N / 2 mm < Sup>□ Sup> [N /(2mm×2mm)]以下,其中,剪切强度是在将加工物经由芯片接合层形成膜和芯片而置于剥离强度试验基板上之后测定的。将剥离强度试验基板上的粘结层形成膜在175℃下加热1小时,然后在250℃的环境下进一步保持30秒。即使经历热历史,气泡(空隙)也不太可能在粘合剂层和被粘物之间的边界处生长。
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